Evaluation of Silicon Carbide (SiC) for Deep Borehole Disposal Canister

PECVD Amorphous Silicon Carbide (α-SiC) Layers for MEMS Applications

Deep borehole disposal of nuclear waste: engineering challenges

In recent years, geological disposal of radioactive waste has focused on placement of highand intermediate-level wastes in mined underground caverns at depths of 500–800 m. Notwithstanding the billions of dollars spent to date on this approach, the difficulty of finding suitable sites and demonstrating to the public and regulators that a robust safety case can be developed has frustrated attemp...

Chapter 1 Introduction to Silicon Carbide ( Sic ) Microelectromechanical Systems ( Mems )

This chapter serves as a brief introduction to the basic properties of silicon carbide (SiC) and the advantages of using SiC over other semiconductor materials for microelectromechanical systems (MEMS). Given the excellent and extensive review chapters that follow this one, I have confined this chapter to recent research performed at the University of Edinburgh in the area of SiC microelectrome...

Ordered mesoporous silicon carbide (OM-SiC) via polymer precursor nanocasting.

Ordered mesoporous SiC with high specific surface area (650-800 m(2) g(-1)) and well ordered pore structure was obtained via nanocasting of polycarbosilanes into SBA-15 and subsequent conversion of the polymer at 1300 degrees C.

Crystal defect evaluation of silicon carbide (SiC) using an electron microscope ; Toshiyuki Isshiki

Electric power is in wide use for information transmission equipment, such as computers and mobile telephones, as well as for use as an energy, heat, and light source, and it is now indispensable for human life. There is a strong requirement for more efficient use of electric power as part of a move toward a low-carbon society, and there are hopes for power management, involving application of ...